6mbi75s-140 igbt modules igbt module ( s series) 1400v / 75a 6 in one-package features compact package p.c.board mount module low v ce (sat) applications inverter for motor drive ac and dc servo drive amplifier uninterruptible power supply industrial machines, such as welding machines maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specified) item symbol collector-emitter voltage v ces gate-emitter voltage v ges collector continuous tj=25c i c current tj=75c 1ms tj=25c i c pulse tj=75c -i c 1ms -i c pulse max. power dissipation (1 device) p c operating temperature t j storage temperature t stg isolation voltage *1 v is screw torque mounting * 2 rating 1400 20 100 75 200 150 75 150 520 +150 -40 to +125 ac 2500 (1min.) 3.5 unit v v a a a a w c c v nm item symbol characteristics conditions unit min. typ. max. zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time diode forward on voltage reverse recovery time i ces i ges v ge(th) v ce(sat) c ies c oes c res t on t r t r(i) t off t f v f t rr ? ? 1.0 ? ? 0.2 5.5 7.2 8.5 ? 2.4 2.7 ? 3.0 ? ? 9000 ? ? 1875 ? ? 1650 ? ? 0.35 1.2 ? 0.25 0.6 ? 0.1 ? ? 0.45 1.0 ? 0.08 0.3 ? 2.6 3.4 ? 2.2 ? ? ? 0.35 v ge =0v, v ce =1400v v ce =0v, v ge =20v v ce =20v, i c =75ma tj=25c v ge =15v, i c =75a tj=125c v ge =0v v ce =10v f=1mhz v cc =800v i c =75a v ge =15v r g =16 ? tj=25c i f =75a, v ge =0v tj=125c i f =75a ma a v v pf s v s electrical characteristics (at tj=25c unless otherwise specified) thermal resistance characteristics item symbol characteristics conditions unit min. typ. max. rth(j-c) thermal resistance rth(j-c) rth(c-f)* 2 ? ? 0.24 ? ? 0.50 ? 0.05 ? igbt fwd the base to cooling fin c/w c/w c/w * 2 : this is the value which is defined mounting on the additional cooling fin with thermal compound equivalent circuit schematic *1:all terminals should be connected together when isolation test will be done. *2 : recommendable value : 2.5 to 3.5 nm (m5) 21(p) 20(n) 1(gu) 2(eu) 3(gx) 5(gv) 6(ev) 19(u) 7(gy) 17(v) 15(w) 9(gw) 11(gz) 10(ew) 4(ex) 8(ey) 12(ez) 13(p) 14(n)
6mbi75s-140 igbt module characteristics 012345 0 50 100 150 200 8v 10v 12v 15v vge= 20v collector current vs. collector-emitter voltage tj= 25c (typ.) collector current : ic [ a ] collector - emitter voltage : vce [ v ] 012345 0 50 100 150 200 8v 10v 12v 15v vge= 20v collector current vs. collector-emitter voltage tj= 125c (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 012345 0 50 100 150 200 tj= 25c tj= 125c collector current vs. collector-emitter voltage vge=15v (typ.) collector - emitter voltage : vce [ v ] collector current : ic [ a ] 5 1 01 52 02 5 0 2 4 6 8 10 ic= 37.5a ic= 75a ic= 150a collector-emitter voltage vs. gate-emitter voltage tj= 25c (typ.) collector - emitter voltage : vce [ v ] gate - emitter voltage : vge [ v ] 0 5 10 15 20 25 30 35 100 1000 10000 20000 capacitance vs. collector-emitter voltage (typ.) vge=0v, f= 1mhz, tj= 25c capacitance : cies, coes, cres [ pf ] collector - emitter voltage : vce [ v ] coes cres cies 0 200 400 600 800 0 200 400 600 800 1000 dynamic gate charge (typ.) vcc=800v, ic=75a, tj= 25c gate charge : qg [ nc ] collector - emitter voltage : vce [ v ] 0 5 10 15 20 25
6mbi75s-140 igbt module 0 50 100 150 50 100 500 1000 ton tr toff tf switching time vs. collector current (typ.) vcc=800v, vge=15v, rg= 16ohm, tj= 25c switching time : ton, tr, toff, tf [ nsec ] collector current : ic [ a ] 0 50 100 150 50 100 500 1000 tf tr ton toff switching time vs. collector current (typ.) vcc=800v, vge=15v, rg= 16ohm, tj= 125c collector current : ic [ a ] switching time : ton, tr, toff, tf [ nsec ] 5 10 50 100 500 50 100 500 1000 5000 toff ton tr tf switching time vs. gate resistance (typ.) vcc=800v, ic=75a, vge=15v, tj= 25c gate resistance : rg [ohm] switching time : ton, tr, toff, tf [ nsec ] 0 50 100 150 0 5 10 15 20 25 30 err(25c) eoff(25c) eon(25c) err(125c) eoff(125c) eon(125c) switching loss vs. collector current (typ.) vcc=800v, vge=15v, rg=16ohm switching loss : eon, eoff, err [ mj/pulse ] collector current : ic [ a ] 5 10 50 100 500 0 10 20 30 40 50 60 switching loss vs. gate resistance (typ.) vcc=800v, ic=75a, vge=15v, tj= 125c switching loss : eon, eoff, err [ mj/pulse ] gate resistance : rg [ohm] eon err eoff 0 200 400 600 800 1000 1200 1400 1600 0 50 100 150 200
6mbi75s-140 igbt module outline drawings, mm 0 1 2 3 4 0 50 100 150 200 tj=25c tj=125c forward current vs. forward on voltage (typ.) forward current : if [ a ] forward on voltage : vf [ v ] 0 50 100 150 10 100 300 irr(125c) irr(25c) trr(25c) trr(125c) reverse recovery characteristics (typ.) vcc=800v, vge=15v, rg=16ohm forward current : if [ a ] reverse recovery current : irr [ a ] reverse recovery time : trr [ nsec ] 0.001 0.01 0.1 1 0.01 0.1 1 transient thermal resistance thermal resistanse : rth(j-c) [ c/w ] pulse width : pw [ sec ] fwd igbt mass : 260g
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